The new DECTRIS QUADRO detector is designed to deliver outstanding performances to materials science Transmission Electron Microscopy (TEM) without any compromise on accuracy, speed, or sensitivity, delivering 24-bit high dynamic range and up to 18‘000 frames/sec readout, no binning, no gimmicks!

The DECTRIS QUADRO is powered by our new EIGER2 ASIC (Application Specific Integrated Circuit), entirely designed by DECTRIS and featuring everything which made the success of our detectors for the most demanding X-ray applications: hybrid pixel technology, instant retrigger, continuous readout and noise-free acquisition.

The QUADRO is a direct electron detector based on hybrid pixel technology where the best readout chip is matched with the most suitable sensor material to provide the optimized sensitivity (DQE) for your application. Dedicated in-pixel electronics allow for single electron counting even at very high count-rates, up to 10 million electrons/pixel/second. The sensor material can be adapted to the energy range of your application. The QUADRO is available with a silicon sensor for low energies (30 – 200 kV) or with CdTe for mid-to-high-energy electrons (120 – 300 kV).

The detector is compatible with the SerialEM program and a variety of transmission electron microscopes. QUADRO is fully integrated into NanoMegas TopSpin and Strain applications.


Orientation mapping with an Aluminum sample:

Figure 1: Orientation mapping results from diffraction patterns acquired with QUADRO. From left to right: Color coded orientation map with grain boundaries, orientation reliability map and index map.


Read more about QUADRO results.

Specifications QUADRO

Pixel size [µm2]
75 x 75
Number of pixels
514 x 514
Active area, width x height [mm2]
38.6 x 38.6
Energy range [keV]
30 - 300
Threshold range [keV]
10 - 80
Maximum frame rate, ROI [Hz]
Maximum frame rate, full frame [Hz]
2'250 (16-bit), 4'500 (8-bit)
Si or CdTe
Data format
Water, 20°C
Dimensions (WHD) [mm3]
200 x 350 x 200
Detective Quantum Efficiency, DQE(0)
0.99 @ 100 kV; 0.96 @ 200kV
Detector mounting
Bottom, on-axis
Radiation hardness [el./mm2]
>5 x 1015

All specifications are subject to change without notice.

  • Direct electron detection
  • Region of interest feature
  • Up to 18'000 frames/sec
  • No dead time
  • Noise-free electron counting
  • 107 counts/pixel/sec
  • No beam stop required
  • Ideal DQE also at low energies
  • Electron diffraction
  • 4D-STEM
  • Strain Mapping
  • Lorentz, magnetic mapping
  • Ptychography
  • In-Situ TEM
  • Dynamic TEM


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