With their high quantum efficiency (greater than 95%) and their large active area of up to 155 x 162 mm, PILATUS4 R CdTe detectors enable fast data collection using any X-ray source from Cu to In. In particular, for Mo, Ag, and In radiation, PILATUS4 R CdTe outperforms any HPC detector with a Si sensor – even PILATUS3, which has the thickest Si sensor available.
A dynamic range spanning ten orders of magnitude is achieved through PILATUS4’s superior count rates and the absence of any detector background. Internal frame rates of up to 200 Hz improve the count-rate correction and ensure highly accurate measurement of strong intensities. With four energy-discriminating thresholds, PILATUS4 offers new possibilities in Laue diffraction and spectral imaging.
- Large & efficient: Active areas of up to 155 x 162 mm, with more than 95% quantum efficiency
- The highest possible dynamic range thanks to zero detector background, superior count rates, and simultaneous read/write.
- Versatile: High quantum efficiency from Cu to In; four energy-discriminating thresholds for polychromatic applications
PILATUS4 R CdTe Detectors*
PILATUS4 R CdTe 1M
PILATUS4 R CdTe 260K
PILATUS4 R CdTe 260K-W
(W x H) [ mm² ]
155.0 x 162.0
77.0 x 79.5
155.0 x 38.3
(W x H)
|1033 x 1080||513 x 530||1033 x 255|
(W x H) [ µm² ]
|150 x 150|
|Energy range [keV]||8 - 25
(8 - 100)1
|Number of energy thresholds||4|
|Threshold range [keV]||4 - 30
(4 - 80)1
|5.0 * 106|
|Readout time2||Continuous readout|
|Sensor material||Cadmium telluride (CdTe)|
|Sensor thickness [µm]||1000|
|Point-spread function (FWHM) [pixels]||1|
(W x H x D) [mm3]
|235 x 237 x 372||114 x 133 x 242||114 x 92 x 242|
*All specifications are subject to change without notice.
1 With optional calibration for an extended energy range.
2 The effective dead time between exposures is < 100 ns (max. loss of 1 count/pixel).
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