Silicon Sensors

For high-energy applications, X-ray detection efficiency is limited by the thickness of the silicon sensor, which converts the X-ray photons into an electrical charge. High-energy sensors with increased sensor thicknesses of 1000 µm compensate for silicon’s lower absorption efficiency at high energies.

All DECTRIS silicon sensors are based on well-established silicon technology. They are available in the MYTHEN2 and PILATUS detector families — from the MYTHEN2 1K to the PILATUS 6M. EIGER detectors incorporate our standard 450 µm silicon sensors.

Fig. 1: Quantum efficiency of 450 and 1000 µm sensors measured at the PTB laboratory at BESSY II.

Photon energy
450 µm
1000 µm
5.4 keV (Cr)
94%
> 80%
8.0 keV (Cu)
98%
96%
12.4 keV (1Å)
84%
97%
17.5 keV (Mo)
47%
76%
22.2 keV (Ag)
27%
50%

Tab. 1: Quantum efficiency at typical X-ray energies. 

Newsletter

Sign up in DECTRIS E-Mail Newsletter for news, events, upgrades and special offers.

We assure you that your personal infomation will not be shared with others.