For high-energy applications, X-ray detection efficiency is limited by the thickness of the silicon sensor, which converts the X-ray photons into an electrical charge. High-energy sensors with increased sensor thicknesses of 1000 µm compensate for silicon’s lower absorption efficiency at high energies.
All DECTRIS silicon sensors are based on well-established silicon technology. They are available in the MYTHEN2 and PILATUS detector families — from the MYTHEN2 1K to the PILATUS 6M. EIGER detectors incorporate our standard 450 µm silicon sensors.
Fig. 1: Quantum efficiency of 450 and 1000 µm sensors measured at the PTB laboratory at BESSY II.
|Photon energy||450 µm||1000 µm|
|5.4 keV (Cr)||94%||> 80%|
|8.0 keV (Cu)||98%||96%|
|12.4 keV (1Å)||84%||97%|
|17.5 keV (Mo)||47%||76%|
|22.2 keV (Ag)||27%||50%|
Tab. 1: Quantum efficiency at typical X-ray energies.